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2N6671 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: 2N6671

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 450

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 10

Max temp (Tj), °C: 200

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N6671 transistor: TO3


Qty min: 10 pces (MOQ)