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2N5416 Transistor Datasheet.

Parameters and Characteristics.


Type Transistor: 2N5416

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 350

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1

Max temp (Tj), °C: 200

Transition frequency (ft), MHz: 115

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N5416 transistor: TO5



Qty min: 10 pces (MOQ)