2SK1118

2SK1118 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: 2SK1118

Type of 2SK1118 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK1118 transistor (tr), nS: 25

Drain-source Capacitance (Cd), pF: 250

Maximum drain-source on-state resistance (Rds), Ohm: 0.95

Package: TO220FM