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2SJ200-Y View larger

2SJ200-Y

2SJ200-Y

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2,4600 €

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2SJ200-Y MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: 2SJ200-Y

Type of 2SJ200-Y transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 120

Maximum drain-source voltage |Uds|, V: 180

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C:

Rise Time of 2SJ200-Y transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P(N)

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2SJ200-Y

2SJ200-Y

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