BD810

BD810 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: BD810

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Max temp (Tj), °C: 150

Transition frequency (ft), MHz: 1.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BD810 transistor: TO220

Qty min: 10 pces (MOQ)