
security guarantee
Appropriate packaging
Exchange under warranty
Type Transistor: 2N5416
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 350
Maximum collector-emitter voltage |Uce|, V: 300
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1
Max temp (Tj), °C: 200
Transition frequency (ft), MHz: 115
Collector capacitance (Cc), pF: 15
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2N5416 transistor: TO5
Qty min: 10 pces (MOQ)