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Type Transistor: 2N5401
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 160
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.6
Max temp (Tj), °C: 135
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 6
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2N5401 transistor: TO92
Qty min: 50 pces (MOQ)