2N3019

2N3019 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: 2N3019

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 1

Max temp (Tj), °C: 190

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N3019 transistor: TO5

Qty min: 10 pces (MOQ)