FQP12N60
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  • FQP12N60

FQP12N60

0.504€
No tax

FQP12N60

10.5 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Quantity

FQP12N60

Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: 10.5 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

 

Mfr Package Description TO-220, 3 PIN
Lead Free Yes
EU RoHS Compliant Yes
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Finish NOT SPECIFIED
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Transistor Application SWITCHING
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 10.5 A
DS Breakdown Voltage-Min 600 V
Avalanche Energy Rating (Eas) 790 mJ
Drain-source On Resistance-Max 0.7000 ohm
Pulsed Drain Current-Max (IDM) 42 A

 

Qty min: 5 pces (MOQ)

FQP12N60