FQAF11N90C
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  • FQAF11N90C

FQAF11N90C

€1.8000
Quantity

FQAF11N90C

Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: 7 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET

 

Mfr Package Description TO-3PF, 3 PIN
Lead Free Yes
EU RoHS Compliant Yes
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Finish MATTE TIN
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Number of Elements 1
Transistor Application SWITCHING
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 7 A
DS Breakdown Voltage-Min 900 V
Avalanche Energy Rating (Eas) 960 mJ
Drain-source On Resistance-Max 1.1 ohm
Pulsed Drain Current-Max (IDM) 28 A

 

Qty min: 2 pces (MOQ)

FQAF11N90C