BLF177
41.000€
No tax
BLF177
Transistors
Manufacturer: NXP
Description: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
- MOSFET, VHF, SOT-121
- Transistor Type: RF MOSFET
- Drain Source Voltage Vds: 125V
- Continuous Drain Current Id: 16A
- Power Dissipation Pd: 220W
| Mfr Package Description | CERAMIC PACKAGE-4 |
| Lead Free | Yes |
| EU RoHS Compliant | Yes |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Finish | NOT SPECIFIED |
| Terminal Position | RADIAL |
| Number of Terminals | 4 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Configuration | SINGLE |
| Case Connection | ISOLATED |
| Number of Elements | 1 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Channel Type | N-CHANNEL |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT |
| Transistor Type | RF POWER |
| Drain Current-Max (ID) | 16 A |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| DS Breakdown Voltage-Min | 125 V |
BLF177