BLF578 - BiF
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  • BLF578 - BiF

BLF578

150.000€
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Appropriate packaging

 

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BLF578

Transistors
Manufacturer: NXP
Description: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LDMOS,RF,1000W,HF-500MHZ,50V

  • Transistor Type: RF MOSFET
  • Drain Source Voltage Vds: 110V
  • Continuous Drain Current Id: 88A
  • Operating Frequency Max: 225MHz
  • RF Transistor Case: SOT-539A
Mfr Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Lead Free Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status ACTIVE
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Surface Mount Yes
Terminal Form FLAT
Terminal Finish NOT SPECIFIED
Terminal Position DUAL
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Configuration COMMON SOURCE, 2 ELEMENTS
Case Connection SOURCE
Number of Elements 2
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type RF POWER
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
DS Breakdown Voltage-Min 110 V

 

 

BLF578