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IRF7201PBF View larger

IRF7201PBF

IRF7201PBF

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0,3960 €

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IRF7201 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transnsitor: IRF7201

Type of IRF7201 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2.5

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 4.5

Maximum drain current |Id|, A: 7.0

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF7201 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.03

Package: SO8

 

Qty min: 10 pces (MOQ)

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IRF7201PBF

IRF7201PBF

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