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IRF7104PBF View larger

IRF7104PBF

IRF7104PBF

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0,3250 €

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IRF7104 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF7104

Type of IRF7104 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2.0

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 2.3

Maximum junction temperature (Tj), °C:

Rise Time of IRF7104 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: SO8

 

Qty min: 10 pces (MOQ)

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IRF7104PBF

IRF7104PBF

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