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Type Transistor: IRF710
Type of IRF710 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W:
Maximum drain-source voltage |Uds|, V: 400
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 2
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF710 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 3.6
Package: TO-220
Qty min: 10 pces (MOQ)