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Type Transistor: IRF620
Type of IRF620 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 70
Maximum drain-source voltage |Uds|, V: 200
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 5
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF620 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 600
Maximum drain-source on-state resistance (Rds), Ohm: 0.8
Package: TO220
Qty min: 10 pces (MOQ)