IRF540NS

IRF540NS MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF540NS

Type of IRF540NS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3.8

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 0.33

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF540NS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: D2PAK