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Type Transistor: IRF540N
Type of IRF540N transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 140
Maximum drain-source voltage |Uds|, V: 100
Maximum gate-source voltage |Ugs|, V: 10
Maximum drain current |Id|, A: 33
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF540N transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.052
Package: TO220AB