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Type Transistor: IRF5305
Type of IRF5305 transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 110
Maximum drain-source voltage |Uds|, V: 55
Maximum gate-source voltage |Ugs|, V: 10
Maximum drain current |Id|, A: 31
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF5305 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.06
Package: TO220AB