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IRF5305

IRF5305

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IRF5305 MOSFET

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0,4140 €

The minimum purchase order quantity for the product is 10

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IRF5305 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF5305

Type of IRF5305 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 110

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 31

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF5305 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.06

Package: TO220AB

 

 

 

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IRF5305

IRF5305

IRF5305 MOSFET

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