Manufacturers

IRF530N View larger

IRF530N

IRF530N

New product

IRF530 MOSFET

More details

0,3250 €

The minimum purchase order quantity for the product is 10

Add to wishlist

More info

IRF530 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF530

Type of IRF530 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 90

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 16

Maximum junction temperature (Tj), °C: 175

Rise Time of IRF530 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 900

Maximum drain-source on-state resistance (Rds), Ohm: 0.16

Package: TO220

 

Reviews

No customer reviews for the moment.

Write a review

IRF530N

IRF530N

IRF530 MOSFET

30 other products in the same category: