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IRF520N

IRF520N

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IRF520N MOSFET

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0,2760 €

The minimum purchase order quantity for the product is 10

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IRF520N MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF520N

Type of IRF520N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 48

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 9.7

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF520N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220AB

 

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IRF520N

IRF520N

IRF520N MOSFET

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