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Type Transistor: IRF520
Type of IRF520 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 70
Maximum drain-source voltage |Uds|, V: 100
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C: 175
Rise Time of IRF520 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 450
Maximum drain-source on-state resistance (Rds), Ohm: 0.27
Package: TO220