IRF510 MOSFET transistor datasheet. Parameters and characteristics.

Type Transistor: IRF510

Type of IRF510 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.6

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF510 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.54

Package: TO220A-B