IRLZ24N

IRLZ24N MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRLZ24N

Type of IRLZ24N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 4.5

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C: 150

Rise Time of IRLZ24N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.06

Package: TO220AB

Qty min: 10 pces (MOQ)