2SK2699
1.438€
No tax
2SK2699
Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
| Mfr Package Description | 2-16C1B, SC-65, 3 PIN |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | THROUGH-HOLE |
| Terminal Finish | NOT SPECIFIED |
| Terminal Position | SINGLE |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | DRAIN |
| Number of Elements | 1 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Channel Type | N-CHANNEL |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT |
| Transistor Type | GENERAL PURPOSE POWER |
| Drain Current-Max (ID) | 12 A |
| DS Breakdown Voltage-Min | 600 V |
| Avalanche Energy Rating (Eas) | 605 mJ |
| Drain-source On Resistance-Max | 0.6500 ohm |
| Pulsed Drain Current-Max (IDM) | 48 A |
Qty min: 4 pces (MOQ)
2SK2699