BUZ104
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  • BUZ104

BUZ104

€0.3600
Quantity

BUZ104

Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 17.5 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

 

Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 17.5 A
DS Breakdown Voltage-Min 50 V
Avalanche Energy Rating (Eas) 35 mJ
Drain-source On Resistance-Max 0.1000 ohm
Pulsed Drain Current-Max (IDM) 70 A

 

Qty min: 6 pces (MOQ)

BUZ104