BUZ104
0.360€
No tax
BUZ104
Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 17.5 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Elements | 1 |
| Transistor Element Material | SILICON |
| Channel Type | N-CHANNEL |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT |
| Transistor Type | GENERAL PURPOSE POWER |
| Drain Current-Max (ID) | 17.5 A |
| DS Breakdown Voltage-Min | 50 V |
| Avalanche Energy Rating (Eas) | 35 mJ |
| Drain-source On Resistance-Max | 0.1000 ohm |
| Pulsed Drain Current-Max (IDM) | 70 A |
Qty min: 6 pces (MOQ)
BUZ104