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Category: Transistors
Manufacturer: International Rectifier
Description: 14 A, 14 V, 0.012 ohm, P-CHANNEL, Si, POWER, MOSFET
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Finish | TIN LEAD |
Terminal Position | DUAL |
Number of Terminals | 8 |
Package Body Material | PLASTIC/EPOXY |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Elements | 1 |
Transistor Element Material | SILICON |
Power Dissipation Ambient-Max | 2.5 W |
Channel Type | P-CHANNEL |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT |
Transistor Type | GENERAL PURPOSE POWER |
Drain Current-Max (ID) | 14 A |
DS Breakdown Voltage-Min | 14 V |
Avalanche Energy Rating (Eas) | 110 mJ |
Drain-source On Resistance-Max | 0.0120 ohm |
Pulsed Drain Current-Max (IDM) | 88 A |
Qty min: 8 pces (MOQ)