2SK3569
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  • 2SK3569

2SK3569

€0.5520
Quantity

2SK3569

Category: Transistors
Manufacturer: Toshiba .
Description: 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET

 

Mfr Package Description LEAD FREE, 2-10U1B, SC-67, 3 PIN
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Finish NOT SPECIFIED
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Transistor Application SWITCHING
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 10 A
DS Breakdown Voltage-Min 600 V
Avalanche Energy Rating (Eas) 363 mJ
Drain-source On Resistance-Max 0.7500 ohm
Pulsed Drain Current-Max (IDM) 40 A

 

Qty min: 8 pces (MOQ)

 

2SK3569