
security guarantee
Appropriate packaging
Exchange under warranty
Category: Transistors
Manufacturer: Toshiba .
Description: 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Mfr Package Description | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Number of Terminals | 3 |
Package Body Material | PLASTIC/EPOXY |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | ISOLATED |
Number of Elements | 1 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Power Dissipation Ambient-Max | 50 W |
Channel Type | N-CHANNEL |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT |
Transistor Type | GENERAL PURPOSE POWER |
Drain Current-Max (ID) | 8 A |
DS Breakdown Voltage-Min | 900 V |
Avalanche Energy Rating (Eas) | 1080 mJ |
Drain-source On Resistance-Max | 1.3 ohm |
Pulsed Drain Current-Max (IDM) | 24 A |
Qty min: 4 pces (MOQ)