2SK3878
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  • 2SK3878

2SK3878

€1.0200
Quantity

2SK3878

Category: Transistors
Manufacturer: Toshiba.
Description: 9 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET

 

Mfr Package Description LEAD FREE, 2-16C1B, SC-65, 3 PIN
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Terminal Form THROUGH-HOLE
Terminal Finish TIN
Terminal Position SINGLE
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection DRAIN
Number of Elements 1
Transistor Application SWITCHING
Transistor Element Material SILICON
Channel Type N-CHANNEL
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE POWER
Drain Current-Max (ID) 9 A
DS Breakdown Voltage-Min 900 V
Avalanche Energy Rating (Eas) 778 mJ
Drain-source On Resistance-Max 1.3 ohm
Pulsed Drain Current-Max (IDM) 27 A

 

Qty min: 4 pces (MOQ)

 

2SK3878