IRF710

0,96 €
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IRF710 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF710

Type of IRF710 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF710 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3.6

Package: TO-220

 

Qty min: 10 pces (MOQ)

IRF710