IRF640

0,31 €
Quantity

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IRF640 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF640

Type of IRF640 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF640 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2100

Maximum drain-source on-state resistance (Rds), Ohm: 0.18

Package: TO220

 

 

Qty min: 10 pces (MOQ)

IRF640