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IRF630 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF630

Type of IRF630 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220



Qty min: 10 pces (MOQ)