IRF5210
  • IRF5210

IRF5210

0,81 €

IRF5210 MOSFET

Quantity

The minimum purchase order quantity for the product is 10.

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  • Appropriate packaging Appropriate packaging
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IRF5210 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF5210

Type of IRF5210 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF5210 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.06

Package: TO220AB

 

 

IRF5210