IRF520

0,25 €

IRF520 MOSFET

Quantity

The minimum purchase order quantity for the product is 10.

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IRF520 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF520

Type of IRF520 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 70

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 175

Rise Time of IRF520 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 450

Maximum drain-source on-state resistance (Rds), Ohm: 0.27

Package: TO220

 

 

IRF520