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IRFZ34N MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRFZ34N

Type of IRFZ34N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 56

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 26

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ34N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220AB



Qty min: 10 pces (MOQ)