BDW83D

0,43 €
Quantity

  • security guarantee security guarantee
  • Appropriate packaging Appropriate packaging
  • Exchange under warranty Exchange under warranty

BDW83D Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: BDW83D

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 15

Max temp (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BDW83D transistor: TO218

 

 

Qty min: 10 pces (MOQ)

BDW83D