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BD682 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: BD682

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Max temp (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BD682 transistor: TO126




Qty min: 20 pces (MOQ)