BDX65C

0,36 €
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BDX65C Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: BDX65C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 16

Max temp (Tj), °C: 200

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of BDX65C transistor: TO3

 

 

Qty min: 10 pces (MOQ)

BDX65C