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2N5551 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: 2N5551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.6

Max temp (Tj), °C: 135

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N5551 transistor: TO92


Qty min: 50 pces (MOQ)