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2N3055 Transistor Datasheet.

Parameters and Characteristics.

Type Transistor: 2N3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 70

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 15

Max temp (Tj), °C: 200

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3055 transistor: TO3



Qty min: 10 pces (MOQ)