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IRF7103 MOSFET transistor datasheet.

Parameters and characteristics.

Type Transistor: IRF7103

Type of IRF7103 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2.0

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 3.0

Maximum junction temperature (Tj), °C:

Rise Time of IRF7103 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.13

Package: SO8


Qty min: 10 pces (MOQ)