2SJ200-Y
2,460 €
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2SJ200-Y MOSFET transistor datasheet.
Parameters and characteristics.
Type Transistor: 2SJ200-Y
Type of 2SJ200-Y transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 120
Maximum drain-source voltage |Uds|, V: 180
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C:
Rise Time of 2SJ200-Y transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: TO3P(N)